cny117 document number 83876 rev. 1.4, 10-jan-05 vishay semiconductors www.vishay.com 1 i179004 i179004 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, phototransistor output, with base connection, 110 c rated features ? operating temperature from - 55 c to + 110 c breakdown voltage, 5300 v rms long term stability industry standard dual-in-line package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) cul - file no. e52744, equivalent to csa bulletin 5a applications ac adapter smps plc factory automation game consoles description the cny117 is a 110 c rated optocoupler consisting of a gallium arsenide infrar ed emitting diode optically coupled to a silicon planar phototransisto r detector in a plastic plug-in dip-6 package. the coupling device is suit able for signal transmission between two electrically separated circuits. the potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. order information for additional information on t he available options refer to option information. part remarks cny117-1 ctr 40 - 80 %, dip-6 cny117-2 ctr 63 - 125 %, dip-6 cny117-3 ctr 100 - 200 %, dip-6 cny117-4 ctr 160 - 320 %, dip-6
www.vishay.com 2 document number 83876 rev. 1.4, 10-jan-05 cny117 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 si fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.0 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissipation p diss 150 mw derate linearly from 25 c 1.5 mw/c parameter test condition symbol value unit isolation test voltage (between emitter and detector referred to standard climate 23/50 din 50014) v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 110 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c
cny117 document number 83876 rev. 1.4, 10-jan-05 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio current transfer ratio i c /i f at v ce = 5.0 v, 25 c and collector-emi tter leakage current by dash number parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 av br 6.0 v reserve current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf base - collector capacitance v ce = 5.0 v, f = 1.0 mhz c bc 6.5 pf emitter - base capacitance v ce = 5.0 v, f = 1.0 mhz c eb 7.5 pf parameter test condition part symbol min ty p. max unit saturation voltage, collector- emitter i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector-emitter leakage current v ce = 10 v cny117-1 i ceo 2.0 50 na cny117-2 i ceo 2.0 50 na cny117-3 i ceo 5.0 100 na cny117-4 i ceo 5.0 100 na parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma cny117-1 ctr 40 80 % cny117-2 ctr 63 125 % cny117-3 ctr 100 200 % cny117-4 ctr 160 320 % i f = 1.0 ma cny117-1 ctr 13 30 % cny117-2 ctr 22 45 % cny117-3 ctr 34 70 % cny117-4 ctr 56 90 %
www.vishay.com 4 document number 83876 rev. 1.4, 10-jan-05 cny117 vishay semiconductors switching characteristics linear operation (without saturation) switching operation (with saturation) typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 w t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 w t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 w t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 w t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v, r l = 75 w f co 250 khz parameter test condition part symbol min ty p. max unit turn-on time i f = 20 ma cny117-1 t on 3.0 s i f = 10 ma cny117-2 t on 4.2 s cny117-3 t on 4.2 s i f = 5.0 ma cny117-4 t on 6.0 s rise time i f = 20 ma cny117-1 t r 2.0 s i f = 10 ma cny117-2 t r 3.0 s cny117-3 t r 3.0 s i f = 5.0 ma cny117-4 t r 4.6 s turn-off time i f = 20 ma cny117-1 t off 18 s i f = 10 ma cny117-2 t off 23 s cny117-3 t off 23 s i f = 5.0 ma cny117-4 t off 25 s fall time i f = 20 ma cny117-1 t f 11 s i f = 10 ma cny117-2 t f 14 s cny117-3 t f 14 s i f = 5.0 ma cny117-4 t f 15 s figure 1. permissible power diss ipation vs. ambient temperature 0 25 50 75 100 125 150 175 0 20406080100120 18777 p Cpower dissipation (mw) tot detector led t C ambient temperature ( q c ) amb figure 2. forward voltag e s. forward current 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17577 v C forward voltage ( v ) f 110 q c 0 q c 50 q c 25 q c C55 q c
cny117 document number 83876 rev. 1.4, 10-jan-05 vishay semiconductors www.vishay.com 5 figure 3. collector current vs . collector emitter voltage figure 4. collector to emitter dark current vs. ambient temperature figure 5. normalized current vs. collector emitter saturation voltage 0 5 10 15 20 25 30 35 40 45 50 0123456789101112131415 v C collector emitter voltage (v) 18733 i C collector current (ma) c ce i = 30 ma i =1ma i=5ma i = 10 ma i=15ma i = 20 ma f f f f f f 0.10 1 10 100 1000 10000 C75 C25 25 75 125 t C ambient temperature ( c ) 18734 ce0 i(na) amb 40 v 12 v 24 v 0 10 20 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v C collector to emitter voltage (v) 18735 i (ma) 25 ma 10 ma 5ma 1ma 2ma c ce figure 6.ormaliecurrent traneratio.ambient temperature figure 7.ormaliecurrent traneratio.ambient temperature figure 8.ormaliect .forarcurrent 0.0 0.2 0.4 0.6 0.8 1.0 1.2 C55 C35 C15 5 25 45 65 85 105 125 t amb C ambient temperature ( q c ) 17578 ctr C normalized output current normalized to i f = 10 ma, t amb = 25 c, v ce = 0.4 v, saturated norm i f = 10 ma 5 ma 1 ma 0.0 0.2 0.4 0.6 0.8 1.0 1.2 C55 C35 C15 5 25 45 65 85 105 125 t amb C ambient temperature ( q c ) 17579 ctr C normalized output current normalized to i f = 10 ma, t amb = 25 c, v ce = 5 v, nonCsaturated norm i f = 10 ma 5 ma 1 ma 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17580 ctr C normalized output current norm normalized to i f = 10 ma, t amb = 25 c, v ce = 5 v, nonCsaturated C4 C1 C3 C2
www.vishay.com 6 document number 83876 rev. 1.4, 10-jan-05 cny117 vishay semiconductors figure 9. normalized ctr vs. forward current figure 10. cut-off frequen cy vs. collector current figure 11. time switching vs. load resistance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17584 C4 C1 C3 C2 ctr C normalized output current norm normalized to i f = 10 ma, t amb = 25 c, v ce = 0.4 v, saturated 1.00 10.00 100.00 1000.00 0.10 1.00 10.00 100.00 i c C collector current ( ma ) 17583 fctr C cutCoff frequency (khz) 25 q c 0 q c 50 q c 25 q c 0 q c 50 q c cnyC1,C2 cnyC3,C4 t amb = 25 c, v ce = 5 v, nonCsaturated 1 10 100 1000 0.1 1 10 100 r C load resistance (k ? ) 18780 switching time ( s) pulse width = 100 ms i = 10 ma duty cycle = 50 % l t off t on f figure 12.timeswitchings.loadresistance figure 13.switchingtimes.baseemitterresistance figure 14.switchingtimes.if 1 10 100 1000 0.1 1 10 100 r C load resistance (k ? ) 18781 switching time ( s) rise fall pulse width = 100 ms i = 10 ma duty cycle = 50 % l t t f 1 10 10 100 1000 10000 log r C base emitter resistance ( ? ) 18782 log t C switching time, s t @ i = 10 ma t @ i = 10 ma pulse width = 100 ms i = 10 ma r = 1000 ? duty cycle = 50 % on/off be on f off f f l 8 2 3 4 5 6 7 9 0 2 4 6 8 10 12 14 16 0 5 10 15 20 if [m a] s w itching time [ u sec] 19274 ce am b rbe = 500 k, v = 5 v , t = + 25 c t on t off
cny117 document number 83876 rev. 1.4, 10-jan-05 vishay semiconductors www.vishay.com 7 figure 15. normalized hfe vs. base current figure 16. normalized hfe vs. base current figure 17. normalized photoc urrent vs. forward current 0.7 0.8 0.9 1.0 1.1 1.2 0.10 1.00 10.00 100.00 i b C base current ( ma ) 17581 normalized h fe normalized to i b = 20 p a, t amb = 25 c, v ce = 5 v, nonCsaturated 110 q c 0 q c 50 q c 25 q c C55 q c 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.01 0.10 1.00 10.00 100.00 i b C base current ( ma ) 17582 normalized h fe normalized to i b = 20 p a, t amb = 25 c, v ce = 0.4 v, saturated 110 q c 0 q c 50 q c 25 q c C55 q c 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 i C forward current (ma) 18786 normalized photocurrent 0c 25 c 50 c 75 c f normalized to i = 10 ma, temp = 25 c and f ce v=5v
www.vishay.com 8 document number 83876 rev. 1.4, 10-jan-05 cny117 vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
cny117 document number 83876 rev. 1.4, 10-jan-05 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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